BAS29215 производитель, Function, датащи

производитель	номер детали	датащи Date Size	подробное описание детали	Rohs Pb Free Lifecycle	домашняя страница
NXP Semiconductors	BAS29		0.25A, 110V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3	compliant yes transferred
ON Semiconductor	BAS29		General Purpose High Voltage Diode, 3000-REEL	yes active
ON Semiconductor	BAS29		General Purpose High Voltage Diode, 3000-REEL	yes active
NXP Semiconductors	BAS29 T/R		General purpose controlled avalanche (double) diodes - C_d max.: 35 pF; Configuration: single ; I_F max: 250 mA; I_FSM max: 10 A; I_R max: 100@VR=90V nA; IFRM: 600 mA; t_rr max: 50 ns; V_Fmax: 1@	compliant no active
NXP Semiconductors	BAS29,215		BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin	compliant transferred
Nexperia	BAS29,215		BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin	active
Nexperia	BAS29,215		BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin	active
NXP Semiconductors	BAS29T/R		DIODE 0.25 A, 110 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode	compliant unknown transferred

BAS29215 производитель